SSF8N80
GOOD-ARK
1.15MB
800v n-channel mosfet. It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive aval
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SSF8N80 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
800V 1.38Ω(typ.)
ID 8A
Features and Benefits:
TO-220
Advanced MOSFET process technology Special d.
SSF8N80A - Advanced Power MOSFET
(Samsung Electronics)
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SSF8N80F - N-Channel MOSFET
(SILIKRON)
Main Product Characteristics:
VDSS RDS(on)
800V 1.3Ω (typ.)
ID 8A
Features and Benefits:
TO-220F
Advanced MOSFET process technology Special .
SSF8N80ZF - MOSFET
(Silikron Semiconductor)
Main Product Characteristics:
SSF8N80ZF
VDSS
800V
RDS(on) 1.1Ω (typ.)
ID 8A Features and Benefits:
TO-220F.
SSF8N60 - 600V N-Channel MOSFET
(GOOD-ARK)
FEATURES ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ .
SSF8N65 - N-Channel MOSFET
(SILIKRON)
SSF8N65
Features ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge min.
SSF8N90A - Advanced Power MOSFET
(Samsung Electronics)
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SSF8NP60U - N-Channel MOSFET
(SILIKRON)
Main Product Characteristics:
VDSS RDS(on)
ID
600V 0.73Ω (typ.)
8A ①
Features and Benefits:
High dv/dt and avalanche capabilities 100% avalanch.
SSF80100 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
75V
RDS(on) 8mΩ(typ.)
ID 80A ①
Features and Benefits:
TO220
Advanced MOS.
SSF80N06A - Advanced Power MOSFET
(Samsung Electronics)
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