Part number:
SSF8N80F
Manufacturer:
SILIKRON
File Size:
499.24 KB
Description:
N-channel mosfet.
SSF8N80F Datasheet (499.24 KB)
* TO-220F
* Advanced MOSFET process technology
* Special designed for PWM, load switching and general purpose applications
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 150℃ operating temperature SSF8N80F Marking and pin Assignment
SSF8N80F Datasheet (499.24 KB)
SSF8N80F
SILIKRON
499.24 KB
N-channel mosfet.
📁 Related Datasheet
SSF8N80 - 800V N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
800V
RDS(on) 1.38Ω(typ.)
ID 8A Features and Benefits
TO-220
Advanced MOSFET process technology Special des.
SSF8N80 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
800V 1.38Ω(typ.)
ID 8A
Features and Benefits:
TO-220
Advanced MOSFET process technology Special d.
SSF8N80A - Advanced Power MOSFET
(Samsung Electronics)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
.D
t a
S a
e h
U 4 t e
m o .c
w
w
w
.D
a t a
e h S
4 t e
U
.
m o c
.
SSF8N80ZF - MOSFET
(Silikron Semiconductor)
Main Product Characteristics:
SSF8N80ZF
VDSS
800V
RDS(on) 1.1Ω (typ.)
ID 8A Features and Benefits:
TO-220F.
SSF8N60 - 600V N-Channel MOSFET
(GOOD-ARK)
FEATURES ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ .
SSF8N65 - N-Channel MOSFET
(SILIKRON)
SSF8N65
Features ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge min.
SSF8N90A - Advanced Power MOSFET
(Samsung Electronics)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
.D
t a
S a
e h
U 4 t e
m o .c
w
w
w
.D
at
h S a
t e e
4U
.
m o c
.
SSF8NP60U - N-Channel MOSFET
(SILIKRON)
Main Product Characteristics:
VDSS RDS(on)
ID
600V 0.73Ω (typ.)
8A ①
Features and Benefits:
High dv/dt and avalanche capabilities 100% avalanch.
