SSF8N90A
Samsung Electronics
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Advanced power mosfet.
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SSF8N60 - 600V N-Channel MOSFET
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FEATURES ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ .
SSF8N65 - N-Channel MOSFET
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SSF8N65
Features ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge min.
SSF8N80 - 800V N-Channel MOSFET
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VDSS
800V
RDS(on) 1.38Ω(typ.)
ID 8A Features and Benefits
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SSF8N80 - MOSFET
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VDSS RDS(on)
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TO-220
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SSF8N80A - Advanced Power MOSFET
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SSF8N80F - N-Channel MOSFET
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Main Product Characteristics:
VDSS RDS(on)
800V 1.3Ω (typ.)
ID 8A
Features and Benefits:
TO-220F
Advanced MOSFET process technology Special .
SSF8N80ZF - MOSFET
(Silikron Semiconductor)
Main Product Characteristics:
SSF8N80ZF
VDSS
800V
RDS(on) 1.1Ω (typ.)
ID 8A Features and Benefits:
TO-220F.
SSF8NP60U - N-Channel MOSFET
(SILIKRON)
Main Product Characteristics:
VDSS RDS(on)
ID
600V 0.73Ω (typ.)
8A ①
Features and Benefits:
High dv/dt and avalanche capabilities 100% avalanch.
SSF80100 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
75V
RDS(on) 8mΩ(typ.)
ID 80A ①
Features and Benefits:
TO220
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SSF80N06A - Advanced Power MOSFET
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