Description
.
The SSF8N60 is a new generation of high voltage
N.
Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layou.
Features
* Extremely high dv/dt capability
* Low Gate Charge Qg results in Simple Drive Requirement
* 100% avalanche tested
* Gate charge minimized
* Very low intrinsic capacitances
* Very good manufacturing repeatability
Applications
* High current, high speed switching
* Ideal for off-line power supply, adaptor, PFC
SSF8N60
600V N-Channel MOSFET
VDSS = 600V ID = 8A Rdson = 0.85Ω (typ. )
SSF8N60 TOP View (TO220)
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous Drain Current,VGS@10V
ID@Tc=100Cْ Continuous Dra