Description
The SSF8N60 is a new generation of high voltage
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Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.
High current, high speed switching
Ideal for off-line power supply, adaptor,
Features
- Extremely high dv/dt capability.
- Low Gate Charge Qg results in Simple Drive Requirement.
- 100% avalanche tested.
- Gate charge minimized.
- Very low intrinsic capacitances.
- Very good manufacturing repeatability.
- Lead free product.