SSF8NP60U N-Channel MOSFET

SILIKRON

Description

Main Product Characteristics: VDSS RDS(on) ID 600V 0.73Ω (typ.) 8A ① .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

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Datasheet Specifications

Part number: SSF8NP60U
Manufacturer: SILIKRON
File Size: 454.51 KB
Datasheet: SSF8NP60U-SILIKRON.pdf
Description: N-Channel MOSFET

Features

* High dv/dt and avalanche capabilities
* 100% avalanche tested
* Low input capacitance and gate charge

Applications

* Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Sin

SSF8NP60U Distributors

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SSF8NP60U N-Channel MOSFET SILIKRON

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