VBA3316G Dual N-Channel MOSFET

VBsemi

Description

VBA3316G www.VBsemi.com Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY Channel-1 Channel-2 VDS (V) 30 30 RDS(on) (Ω) 0.017.

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Datasheet Specifications

Part number: VBA3316G
Manufacturer: VBsemi
File Size: 309.05 KB
Datasheet: VBA3316G-VBsemi.pdf
Description: Dual N-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested

Applications

* Notebook Logic dc-to-dc
* Low Current dc-to-dc D1 G1 1 S2 2 S2 3 G2 4 SO-8 Top View 8 D1 7 S1/D2 6 S1/D2 5 S1/D2 G1 N-Channel 1 MOSFET G2 N-Channel 2 MOSFET S2 S1/D2 Schottky Diode ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel-1 C

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