* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % UIS Tested
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Set Top Box
* Low Current DC/DC S2/A 1 8 D2/K G2 2 7 D2/K S1 3 6 D1 G1
VBA3316SA Datasheet (287.70 KB)
VBA3316SA
VBsemi
287.70 KB
Dual n-channel field effect transistor.
VBA3316SA www.VBsemi.com Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.008 a.
📁 Related Datasheet
VBA3316SD Dual N-Channel MOSFET (VBsemi)
VBA3316G Dual N-Channel MOSFET (VBsemi)
VBA3303 Dual N-Channel MOSFET (VBsemi)
VBA3328 Dual N-Channel MOSFET (VBsemi)
VBA3108N Dual N-Channel MOSFET (VBsemi)
VBA3615 Dual N-Channel MOSFET (VBsemi)
VBA3638 Dual N-Channel MOSFET (VBsemi)
VBA1104N N-Channel MOSFET (VBsemi)
VBA1206 N-Channel MOSFET (VBsemi)
VBA1208N N-Channel MOSFET (VBsemi)
