VBA3316SA Dual N-Channel Field Effect Transistor

VBsemi

Description

VBA3316SA www.VBsemi.com Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.008 a.

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Datasheet Specifications

Part number: VBA3316SA
Manufacturer: VBsemi
File Size: 287.70 KB
Datasheet: VBA3316SA-VBsemi.pdf
Description: Dual N-Channel Field Effect Transistor

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % UIS Tested
* 100 % Rg Tested

Applications

* Set Top Box
* Low Current DC/DC S2/A 1 8 D2/K G2 2 7 D2/K S1 3 6 D1 G1 4 5 D1 SOIC-8 D2 D1 K A G2 G1 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain CurrentA Pulsed Dra

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VBA3316SA Dual N-Channel Field Effect Transistor VBsemi

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