VBA3328 Datasheet - VBsemi

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VBA3328 Dual N-Channel MOSFET

VBA3328 Dual N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 10 V 30 0.026 at VGS = 4.5 V ID (A) .

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Datasheet Details

Part number:

VBA3328

Manufacturer:

VBsemi

File Size:

228.37 KB

Description:

Dual N-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % UIS Tested
* 100 % Rg Tested

Applications

* Set Top Box
* Low Current DC/DC D1 D2 G1 S1 N-Channel MOSFET G2 S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 6.8a Continuous Drain

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