* TrenchFET® power MOSFET
* 100 % Rg and UIS tested D1 D2 G1 G2 4 3 G2 2 S2 1 G1 S1 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Cu
VBA3638
VBsemi
286.33 KB
Dual n-channel mosfet.
VBA3638 www.VBsemi.com Dual N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) .
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