VBBD5222 Complementary MOSFET

VBsemi

Description

VBBD5222 Complementary 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) 0.032 at VGS = 4.5 V 0.

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Datasheet Specifications

Part number: VBBD5222
Manufacturer: VBsemi
File Size: 317.16 KB
Datasheet: VBBD5222-VBsemi.pdf
Description: Complementary MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFETs
* Ultra Low RDS(on) and Excellent Power Handling In Compact Footprint

Applications

* Load Switching for Portable Devices D1 S2 G2 G1 Bottom View S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel P-Channel Parameter Symbol 5 s Steady State 5 s Steady State Unit Drain-Source Voltage Gate-Source Voltage

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