* TrenchFET® Power MOSFET
* Package with Low Thermal Resistance
* 100 % Rg and UIS Tested TO-252 GDS Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Conti
VBE1606
VBsemi
275.33 KB
N-channel mosfet.
VBE1606 www.VBsemi.com N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Confi.
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