VBE55-06NO7 - High Performance Fast Recovery Diode

IXYS Corporation

Datasheet Details

Part number	VBE55-06NO7
Manufacturer	IXYS Corporation
File Size	221.26 KB
Description	High Performance Fast Recovery Diode
Datasheet	VBE55-06NO7_IXYSCorporation.pdf

/ Advantages:.
Planar passivated chips.
Very low leakage current.
Very short recovery time.
Improved thermal behaviour.
Very low Irm-values.
Very soft recovery behaviour.
Avalanche voltage rated for reliable operation.
Soft reverse recovery for low EMI/RFI.
Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch.

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Published: Apr 16, 2005 |