* TrenchFET® Power MOSFET
* 100 % UIS Tested APPLICATIONS
* Load Switch S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain
VBFB2610N Datasheet (220.13 KB)
VBFB2610N
VBsemi
220.13 KB
P-channel mosfet.
VBFB2610N
P-Channel 60-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 60
0.066 at VGS = - 10 V
0.080 at VGS = - 4.5 V
TO.
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