VBL16I07
VBsemi
2.10 MB
600v trench and fieldstop igbt.
VBL16I07
600V Trench and Fieldstop IGBT
www.VBsemi.com
PRODUCT SUMMARY
VCE (V) IC (A)
600
14 (TC=25 )
7(TC=100 )
VCE sat (V)
1.7
ICM (A)
21.
* Very Low VCEsat
* Low turn-off losses
* High speed switching
* Maximum junction temperature 175°C
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS) APPLICATIONS
* Telecommunications - Server and telecom power supplies
* Ligh
📁 Related Datasheet
VBL16I20 - 600V Trench and Fieldstop IGBT
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VBL16I20
600V Trench and Fieldstop IGBT
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PRODUCT SUMMARY
VCE (V) IC (A)
600
40 (TC=25 )
20(TC=100 )
VCE sat (V)
1.8
ICM (A)
6.
VBL1603 - N-Channel MOSFET
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VBL1603
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
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VBL1606 - N-Channel MOSFET
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VBL1606
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS RDS(on) VGS = 10 V ID Configuration
60
V
4
m
150
A
Single
FEATURES • TrenchFET® pow.
VBL1615 - N-Channel MOSFET
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VBL1615
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration
60
V
11
mΩ
12
mΩ
75
A
Singl.
VBL165R15S - N-Channel MOSFET
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VBL165R15S
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N-Channel 650V (D-S) Super Junction Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg Typ. (nC) Qg.
VBL16R02 - Power MOSFET
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VBL16R02
Power MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600
VGS = 10 V
3.5
200.
