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VBL2101N P-Channel MOSFET

VBL2101N Description

VBL2101N P-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Max.-100 0.011 at VGS = - 10 V 0.013 at VGS = - 4.5 V.

VBL2101N Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested

VBL2101N Applications

* Power Switch
* Load Switch in High Current Applications
* DC/DC Converters D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC

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Datasheet Details

Part number
VBL2101N
Manufacturer
VBsemi
File Size
261.52 KB
Datasheet
VBL2101N-VBsemi.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET VBsemi
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