* TrenchFET® power MOSFET
* 100 % Rg and UIS tested D1 D2 G1 G2 4 3 G2 2 S2 1 G1 S1 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Cu
VBZA4946 Datasheet (360.50 KB)
VBZA4946
VBsemi
360.50 KB
Dual n-channel mosfet.
VBZA4946
www.VBsemi.com
Dual N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A) per le.
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