* TrenchFET® power MOSFET
* Package with low thermal resistance
* 100 % Rg and UIS tested TO-263 D Top View S D G G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS
VBZL80N06 Datasheet (416.83 KB)
VBZL80N06
VBsemi
416.83 KB
N-channel mosfet.
VBZL80N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration 60 V 6 mΩ 11 .
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