* Ultra Low Gate Charge
* Reduced Gate Drive Requirement
* Enhanced 30 V, VGS Rating
* Reduced Ciss, Coss, Crss
* Extremely High Frequency Operation
* Repetitive Avalanche Rated
* Compliant to RoHS Directive 2002/95/EC Available RoHS
* COMP
VBZM5N50 Datasheet (360.79 KB)
VBZM5N50
VBsemi
360.79 KB
Power mosfet.
VBZM5N50 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 1.2 39 .
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