V6WL45C Datasheet - VISHAY

V6WL45C Dual Trench MOS Barrier Schottky Rectifier

V6WL45C Features

* Trench MOS Schottky technology

* Ideal for automated placement

* Low forward voltage drop, low power losses

* High efficiency operation K Dual Trench MOS Barrier Schottky Rectifier TMBS® TO-252 (D-PAK)

* Meets MSL level 1 , per J-STD- 020, LF maximum peak

Datasheet Details

V6WL45C

177.22 KB

Dual trench mos barrier schottky rectifier.

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V6WL45C Dual Trench MOS Barrier Schottky Rectifier VISHAY

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