V6WM100C-M3 - Dual Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	V6WM100C-M3
Manufacturer	Vishay
File Size	122.64 KB
Description	Dual Trench MOS Barrier Schottky Rectifier
Datasheet	V6WM100C-M3-Vishay.pdf

Trench MOS Schottky technology.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Published: Jun 8, 2020 |