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V6W60C-M3 Datasheet - Vishay

V6W60C-M3 Dual Trench MOS Barrier Schottky Rectifier

V6W60C-M3 Features

* Trench MOS Schottky technology

* Ideal for automated placement

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

* Material categorization: For definitions of compli

V6W60C-M3-Vishay.pdf

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Datasheet Details

Part number:

V6W60C-M3

Manufacturer:

Vishay ↗

File Size:

121.91 KB

Description:

Dual trench mos barrier schottky rectifier.

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V6W60C-M3 V6W60C-M3 Dual Trench MOS Barrier Schottky Rectifier Vishay

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