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2N2919 - NPN Dual Silicon Transistor

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VPT

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2N2919 NPN Dual Silicon Transistor by VPT - Datasheet Preview — Datasheet preview – 2N2919

Datasheet Details

Part number	2N2919
Manufacturer	VPT
File Size	511.21 KB
Description	NPN Dual Silicon Transistor
Datasheet	2N2919 Datasheet
Additional preview pages of the 2N2919 datasheet.

Product details

Features

Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/355.
TO-78 and U package types.
Radiation Tolerant Levels M, D, P, L, and R Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Collector - Base Cutoff Current Test Conditions VCB = 70 V dc Symbol Units Min. ICBO1 µA dc.
Max. 10 Emitter - Base Cutoff Current Breakdown Voltage, Collector-Emitter VEB = 6 V dc IC = 10 mA dc IEBO1 µA dc.
10 V(BR)C.

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Published: Feb 26, 2025 |