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JANHCB1N5711 Schottky Barrier Diode

JANHCB1N5711 Description

JANHCB1N5711, JANKCB1N5711 Schottky Barrier Diode Die .
at any time, without notice.

JANHCB1N5711 Features

* Qualified to MIL-PRF-19500/444
* Compatible With All Wire Bonding And Die Attach Techniques with The Exception Of Solder Reflow
* Silicon Dioxide Passivated

JANHCB1N5711 Applications

* Available In Commercial Version As CD5711 Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Reverse Breakdown Voltage Reverse Breakdown Voltage Forward Voltage IR = 10 µA dc TA = -55 0C IR = 10 µA dc IF = 1 mA dc

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Datasheet Details

Part number
JANHCB1N5711
Manufacturer
VPT
File Size
276.57 KB
Datasheet
JANHCB1N5711-VPT.pdf
Description
Schottky Barrier Diode

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Schottky Barrier Diode VPT
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