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JANHCD2N3501, JANHCD2N3500 NPN Medium Power Silicon Transistor

JANHCD2N3501 Description

JANHCD2N3500, JANHCD2N3501 JANKCD2N3500, JANKCD2N3501 NPN Medium Power Silicon Transistor Die .

JANHCD2N3501 Features

* Available in JANHC, JANKC and R versions per MIL-PRF-19500/366
* Rad Hard Assurance Levels M, D, P, L and R

JANHCD2N3501 Applications

* Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage IC = 10 mA dc V(BR)CEO V dc 150
* Collector - Base Cutoff Current Collector - Base Cutoff Current Emitter - Base Cutoff Cu

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: JANHCD2N3501, JANHCD2N3500. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
JANHCD2N3501, JANHCD2N3500
Manufacturer
VPT
File Size
252.80 KB
Datasheet
JANHCD2N3500-VPT.pdf
Description
NPN Medium Power Silicon Transistor
Note
This datasheet PDF includes multiple part numbers: JANHCD2N3501, JANHCD2N3500.
Please refer to the document for exact specifications by model.

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NPN Medium Power Silicon Transistor VPT
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