Description
JANHCB1N5711, JANKCB1N5711 Schottky Barrier Diode Die .
at any time, without notice.
Features
* Qualified to MIL-PRF-19500/444
* Compatible With All Wire Bonding And Die Attach
Techniques with The Exception Of Solder Reflow
* Silicon Dioxide Passivated
Applications
* Available In Commercial Version As CD5711
Rev. V1
Electrical Characteristics (TA = +25oC unless otherwise specified)
Parameter
Test Conditions
Symbol Units Min. Reverse Breakdown Voltage Reverse Breakdown Voltage
Forward Voltage
IR = 10 µA dc TA = -55 0C IR = 10 µA dc
IF = 1 mA dc