Description
JANHCE2N5152, JANHCE2N5154 JANKCE2N5152, JANHCE2N5154 NPN Power Silicon Transistor Die .
at any time, without notice.
Features
* Available in commercial JANHCE and JANKCE MIL-PRF19500/544
* Rad Tolerant to 100K rads (Si)
Applications
* Rev. V1
Electrical Characteristics (TA = +25oC unless otherwise specified)
Parameter
Test Conditions
Symbol Units Min. Collector - Emitter Breakdown Voltage
IC = 100 mA dc, IB = 0
V(BR)CEO V dc
80
Emitter - Base Cutoff Current Collector - Emitter Cutoff Current
VEB = 4.0 Vdc, IC = 0 VEB =