3N187 Datasheet, Transistor, Vaishali Semiconductor

PDF File Details

Manufacture Logo for Vaishali Semiconductor
Vaishali Semiconductor manufacturer logo

Part number:

3N187

Manufacturer:

Vaishali Semiconductor

File Size:

486.09kb

Download:

📄 Datasheet

Description:

Silicon dual insulated-gate field-effect transistor.

Datasheet Preview: 3N187 📥 Download PDF (486.09kb)
Page 2 of 3N187 Page 3 of 3N187

📁 Related Datasheet

3N180-E3 - 1800V N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 3N180-E3 Preliminary 3.0A, 1800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N180-E3 provide excellent RDS(ON), l.

3N187 - n-channel dual gate MOSFET (Siliconix)
- 00 z C? depletion-type n-channel dual gate MOSFET H designed for • • • Performance Curves MCB See Section 4 • VHF Amplifiers • IF Amplifie.

3N188 - Dual P-Channel MOSFET (Intersil)
Free Datasheet http://.. Free Datasheet http://.. .

3N189 - Dual P-Channel MOSFET (Intersil)
Free Datasheet http://.. Free Datasheet http://.. .

3N100E - MTB3N100E (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount .

3N1012 - Power-Transistor (Infineon)
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.

3N10L26 - Power-Transistor (Infineon)
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.

3N120-E3 - 1200V N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 3N120-E3 Preliminary 3.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N120-E3 provide excellent RDS(ON), l.

3N124 - N-channel Transistor (ETC)
3N 124 (SILICON) 3N125 3N126 N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-power switching and amplifier app.

3N125 - N-channel Transistor (ETC)
3N 124 (SILICON) 3N125 3N126 N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-power switching and amplifier app.

Stock and price

RAF Electronic Hardware
Washers 1/4OD X .025 HL X .115ID Shoulder Washer
Mouser Electronics
5563-N-187-040-115
0 In Stock
Qty : 5350 units
Unit Price : $0.29

TAGS

3N187 SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR Vaishali Semiconductor