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3N180-E3 - 1800V N-CHANNEL POWER MOSFET

Description

The UTC 3N180-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S0.
  • RDS(ON) ≤ 10.3 Ω @ VGS=10V, ID=1.5A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 3N180-E3 Preliminary 3.0A, 1800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N180-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 10.3 Ω @ VGS=10V, ID=1.
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