Datasheet4U Logo Datasheet4U.com

SI4684DY_RC Datasheet - Vaishali Semiconductor

R-C Thermal Model Parameters

SI4684DY_RC General Description

The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse T.

SI4684DY_RC Datasheet (216.15 KB)

Preview of SI4684DY_RC PDF

Datasheet Details

Part number:

SI4684DY_RC

Manufacturer:

Vaishali Semiconductor

File Size:

216.15 KB

Description:

R-c thermal model parameters.

📁 Related Datasheet

SI4684DY N-Channel 30-V (D-S) MOSFET (Vishay Siliconix)

Si4684-A10 FM/DAB/DAB+ RADIO RECEIVER (Silicon Laboratories)

Si4686DY N-Channel 30-V (D-S) MOSFET (Vishay)

Si4688-A10 FM/HD/DAB/DAB+ RADIO RECEIVER (Silicon Laboratories)

Si4688DY N-Channel 30-V (D-S) MOSFET (Vishay)

Si4606 N+P Complementary Enhancement MOSFET (Nanxin)

SI4618DY Dual N-Channel 30-V (D-S) MOSFET (Vishay Siliconix)

SI4620DY N-Channel MOSFET (Vishay)

SI4622DY Dual N-Channel MOSFET (Vishay)

SI4628DY N-Channel MOSFET (Vishay)

TAGS

SI4684DY_RC R-C Thermal Model Parameters Vaishali Semiconductor

Image Gallery

SI4684DY_RC Datasheet Preview Page 2 SI4684DY_RC Datasheet Preview Page 3

SI4684DY_RC Distributor