Si4606 Datasheet (Nanxin) - N+P Complementary Enhancement MOSFET

Si4606, N+P Complementary Enhancement MOSFET

1 Si4606 N-Channel Electrical Characteristics at Ta=250C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse

Si4606 Features

* Low On resistance.

* +4.5V drive.

* RoHS compliant. Si460N6+P Complementary Enhancement MOSFET Si4606 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (P