Datasheet4U Logo Datasheet4U.com

Si4606 - N+P Complementary Enhancement MOSFET

Si4606 Description

.
1 Si4606 N-Channel Electrical Characteristics at Ta=250C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain.

Si4606 Features

* Low On resistance.
* +4.5V drive.
* RoHS compliant. Si460N6+P Complementary Enhancement MOSFET Si4606 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (P

📥 Download Datasheet

Preview of Si4606 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
Si4606
Manufacturer
Nanxin
File Size
465.83 KB
Datasheet
Si4606-Nanxin.pdf
Description
N+P Complementary Enhancement MOSFET

📁 Related Datasheet

  • SI4618DY - Dual N-Channel 30-V (D-S) MOSFET (Vishay Siliconix)
  • SI4620DY - N-Channel MOSFET (Vishay)
  • SI4622DY - Dual N-Channel MOSFET (Vishay)
  • SI4628DY - N-Channel MOSFET (Vishay)
  • Si4629-A10 - Single-Chip AM/FM/HD/DAB/DAB+/RDS/RDBS Data Receiver (Silicon Laboratories)
  • SI4630DY - N-Channel MOSFET (Vishay)
  • SI4634DY - N-Channel MOSFET (Vishay)
  • SI4642DY - N-Channel 30-V (D-S) MOSFET (Vishay Siliconix)

📌 All Tags

N +P Complementary Enhancement MOSFET Nanxin
Nanxin Si4606-like datasheet

Si4606 Stock/Price