Si4606 N+P Complementary Enhancement MOSFET

Description

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1 Si4606 N-Channel Electrical Characteristics at Ta=250C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain.

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Datasheet Specifications

Part number: Si4606
Manufacturer: Nanxin
File Size: 465.83 KB
Datasheet: Si4606-Nanxin.pdf
Description: N+P Complementary Enhancement MOSFET

Features

* Low On resistance.
* +4.5V drive.
* RoHS compliant. Si460N6+P Complementary Enhancement MOSFET Si4606 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (P

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