Si4606 Datasheet - Nanxin

N+P Complementary Enhancement MOSFET

Si4606 Features

* Low On resistance.

* +4.5V drive.

* RoHS compliant. Si460N6+P Complementary Enhancement MOSFET Si4606 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (P

Si4606 General Description

1 Si4606 N-Channel Electrical Characteristics at Ta=250C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse .

Si4606 Datasheet (465.83 KB)

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Part number:

Si4606

Manufacturer:

Nanxin

File Size:

465.83 KB

Description:

N+p complementary enhancement mosfet.

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Si4606 N +P Complementary Enhancement MOSFET Nanxin

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Si4606 Features

Si4606 General Description

Datasheet Details

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