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Si4435 - P-Channel Enhancement MOSFET

Si4435 Description

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Si4435 Features

* Low On resistance.
* -4.5V drive.
* RoHS compliant. Si4435 P-Channel Enhancement MOSFET Si4435 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current

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Datasheet Details

Part number
Si4435
Manufacturer
Nanxin
File Size
303.73 KB
Datasheet
Si4435-Nanxin.pdf
Description
P-Channel Enhancement MOSFET

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P-Channel Enhancement MOSFET Nanxin
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