SI4435DY-T1-E3 P-Channel MOSFET

VBsemi

Description

SI4435DY-T1-E3 www.VBsemi.com SI4435DY-T1-E3 P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.018 at VGS = - 10 V 0.024 .

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Datasheet Specifications

Part number: SI4435DY-T1-E3
Manufacturer: VBsemi
File Size: 480.10 KB
Datasheet: SI4435DY-T1-E3-VBsemi.pdf
Description: P-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET

Applications

* Load Switch
* Battery Switch S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Curr

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SI4435DY-T1-E3 P-Channel MOSFET VBsemi

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