SI4435DYPBF HEXFET Power MOSFET

International Rectifier

Description

www.DataSheet4U.com PD- 95133 Si4435DYPbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape &.
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance p.

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Datasheet Specifications

Part number: SI4435DYPBF
Manufacturer: International Rectifier
File Size: 143.28 KB
Datasheet: SI4435DYPBF_InternationalRectifier.pdf
Description: HEXFET Power MOSFET

Applications

* . The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package

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HEXFET Power MOSFET International Rectifier

International Rectifier SI4435DYPBF-like datasheet