Si4410DY Power MOSFET

International Rectifier

Description

PD - 91853C Si4410DY l N-Channel MOSFET l Low On-Resistance S l Low Gate Charge l Surface Mount S l Logic Level Drive S G .
This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology.

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Datasheet Specifications

Part number: Si4410DY
Manufacturer: International Rectifier
File Size: 88.75 KB
Datasheet: Si4410DY-InternationalRectifier.pdf
Description: Power MOSFET

Applications

* The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. HEXFET® Power MOSFET AA 1 8 D VDSS = 30V 2 7 D 3 6 D 4 5 D RDS(on) = 0.0135Ω Top View SO-8 Absolute Maximum Ratings

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Si4410DY Power MOSFET International Rectifier

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