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Si4410DY Datasheet - International Rectifier

Power MOSFET

Si4410DY General Description

This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with .

Si4410DY Datasheet (88.75 KB)

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Datasheet Details

Part number:

Si4410DY

Manufacturer:

International Rectifier

File Size:

88.75 KB

Description:

Power mosfet.

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Si4410DY Power MOSFET International Rectifier

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