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Si4410DYPbF Datasheet - International Rectifier

Si4410DYPbF Power MOSFET

This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low onresistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with c.

Si4410DYPbF-InternationalRectifier.pdf

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Datasheet Details

Part number:

Si4410DYPbF

Manufacturer:

International Rectifier

File Size:

115.45 KB

Description:

Power mosfet.

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Si4410DYPbF Si4410DYPbF Power MOSFET International Rectifier