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Si4410DYPbF

Power MOSFET

Si4410DYPbF General Description

This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low onresistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with c.

Si4410DYPbF Datasheet (115.45 KB)

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Datasheet Details

Part number:

Si4410DYPbF

Manufacturer:

International Rectifier

File Size:

115.45 KB

Description:

Power mosfet.

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Si4410DYPbF Power MOSFET International Rectifier

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