Si4410DYPbF Power MOSFET

International Rectifier

Description

l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive l Lead-Free .
This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology.

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Datasheet Specifications

Part number: Si4410DYPbF
Manufacturer: International Rectifier
File Size: 115.45 KB
Datasheet: Si4410DYPbF-InternationalRectifier.pdf
Description: Power MOSFET

Applications

* The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. PD - 95168 Si4410DYPbF HEXFET® Power MOSFET S1 S2 S3 G4 AA 8D 7D VDSS = 30V 6D 5 D RDS(on) = 0.0135Ω Top View SO-8 Absolute M

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Power MOSFET International Rectifier

International Rectifier Si4410DYPbF-like datasheet