Si4420DYPbF
International Rectifier
110.75kb
Power mosfet. This N-channel HEXFET® power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-r
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SI4420DY - N-channel FET
(NXP)
Si4420DY
N-channel enhancement mode field-effect transistor
M3D315
Rev. 01 — 28 May 2001
Product data
1. Description
N-channel enhancement mode field.
Si4420DY - Single N-Channel MOSFET
(Fairchild Semiconductor)
Si4420DY
January 2000
Si4420DY*
Single N-Channel Logic Level PowerTrench® MOSFET
General Description
This N-Channel Logic Level MOSFET is produced .
Si4420DY - Power MOSFET
(International Rectifier)
PD - 93835
Si4420DY
l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive
S S S G
Description
This N-channel.
SI4421 - Universal ISM Band FSK Transceiver
(Silicon Labs)
Si4421 Universal ISM Band FSK Transceiver
DESCRIPTION
Silicon Labs’ Si4421 is a single chip, low power, multi-channel FSK transceiver designed for use.
SI4421DY - P-Channel MOSFET
(Vishay Siliconix)
P-Channel 20-V (D-S) MOSFET
Si4421DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.00875 at VGS = - 4.5 V
- 20 0.01075 at VGS = - 2.5 V.
SI4423DY - P-Channel MOSFET
(Vishay Siliconix)
P-Channel 20-V (D-S) MOSFET
Si4423DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0075 at VGS = - 4.5 V
- 20 0.009 at VGS = - 2.5 V
0.
SI4425BDY - P-Channel MOSFET
(Vishay Siliconix)
P-Channel 30-V (D-S) MOSFET
Si4425BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.012 at VGS = - 10 V 0.019 at VGS = - 4.5 V
ID .
Si4425DDY - P-Channel 30-V (D-S) MOSFET
(Vishay)
P-Channel 30-V (D-S) MOSFET
Si4425DDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0098 at VGS = 10 V - 30
0.0165 at VGS = 4.5 V
ID (A.
SI4425DY-T1-E3 - P-Channel MOSFET
(VBsemi)
SI4425DY-T1-E3
P-Channel 30-V (D-S) MOSFET
.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
0.0125 at VGS = - 10 V
0.0180 at VGS = - 4.5.
Si4427BDY - P-Channel 30-V (D-S) MOSFET
(Vishay)
Si4427BDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 30 RDS(on) (Ω) 0.0105 at VGS = - 10 V 0.0125 at VGS = - 4.5 V 0.019.