Si4412DY Datasheet - TEMIC

Si4412DY N-Channel Enhancement-Mode MOSFET

Si4412DY N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) 30 rDS(on) (W) 0.028 @ VGS = 10 V 0.042 @ VGS = 4.5 V ID (A) "7.0 "5.8 D D D D SO-8 S S S G 1 2 3 4 Top View S S S N-Channel MOSFET 8 7 6 5 D D D D G Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Tem.

Si4412DY Datasheet (56.65 KB)