Si4953DY Datasheet - TEMIC

Si4953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) 30 rDS(on) (W) 0.053 @ VGS = 10 V 0.095 @ VGS = 4.5 V ID (A) "4.9 "3.6 SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View S1 G1 S2 G2 D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous