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SI4910DY - Dual N-Channel 40-V (D-S) MOSFET

SI4910DY Description

Dual N-Channel 40-V (D-S) MOSFET Si4910DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.027 at VGS = 10 V 40 0.032 at VGS = 4.5 V ID (A.

SI4910DY Features

* Halogen-free According to IEC 61249-2-21 Available
* TrenchFET® Power MOSFET

SI4910DY Applications

* CCFL Inverter D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (10 µs Pulse Width) Source-Drain Curren

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Datasheet Details

Part number
SI4910DY
Manufacturer
Vaishali Semiconductor
File Size
102.47 KB
Datasheet
SI4910DY_VaishaliSemiconductor.pdf
Description
Dual N-Channel 40-V (D-S) MOSFET

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Dual N-Channel 40-V D-S MOSFET Vaishali Semiconductor
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