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SI4410BDY N-Channel MOSFET

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Description

N-Channel 30-V (D-S) MOSFET Si4410BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0135 at VGS = 10 V 0.020 at VGS = 4.5 V ID (A) 1.

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Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested

Applications

* Battery Switch
* Load Switch D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID

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