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VG36128801BT - CMOS Synchronous Dynamic RAM

Description

16 x 4 (word x bit x bank), respectively.

Features

  • Single 3.3V ( ± 0.3V ) power supply.
  • High speed clock cycle time -7H: 133MHz, -7L: 133MHz, -8H: 100MHz.
  • Fully synchronous operation referenced to clock rising edge.
  • Possible to assert random column access in every cycle.
  • Quad internal banks controlled by BA0 & BA1 (Bank Select).
  • Byte control by LDQM and UDQM for VG36128161DT.
  • Programmable Wrap sequence (Sequential / Interleave).
  • Programmable burst lengt.

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Datasheet Details

Part number VG36128801BT
Manufacturer Vanguard International Semiconductor
File Size 1.33 MB
Description CMOS Synchronous Dynamic RAM
Datasheet download datasheet VG36128801BT Datasheet
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VIS Description 16 x 4 (word x bit x bank), respectively. VG36128401BT / VG36128801BT / VG36128161BT CMOS Synchronous Dynamic RAM The VG36128401B, VG36128801B and VG3664128161B are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4 and 2,097,152 x The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All input and outputs are synchronized with the positive edge of the clock.The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).These products are packaged in 54-pin TSOPII. Features • Single 3.3V ( ± 0.
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