VG3617161ET - CMOS Synchronous Dynamic RAM

Vanguard International Semiconductor

VG3617161ET Datasheet Preview — Preview of VG3617161ET PDF

Datasheet Details

Part number	VG3617161ET
Manufacturer	Vanguard InterNational Semiconductor ↗
File Size	1.10 MB
Description	CMOS Synchronous Dynamic RAM
Datasheet	VG3617161ET_VanguardInternationalSemiconductor.pdf

VG3617161ET Product details

Description

VG3617161ET 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank.It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply.This SDRAM is delicately designed with performance concern for current high-speed application.Programmable CAS Latency and Burst Length make it possible to be used in widely various domains.It is packaged by using JEDEC stan

Features

Single 3.3V +/- 0.3V power supply.
Clock frequency:166MHz, 143MHz, 125MHz.
Fully synchronous with all signals referenced to a positive clock edge.
Programmable CAS Iatency (2,3).
Programmable burst length (1,2,4,8,& Full page).
Programmable wrap sequence (Sequential/Interleave).
Automatic precharge and controlled precharge.
Auto refresh and self refresh modes.
Dual internal banks controlled by A11(Bank select).

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Published: Apr 16, 2005 |