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VG3617161ET - CMOS Synchronous Dynamic RAM

Description

The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank.

It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply.

Features

  • Single 3.3V +/- 0.3V power supply.
  • Clock frequency:166MHz, 143MHz, 125MHz.
  • Fully synchronous with all signals referenced to a positive clock edge.
  • Programmable CAS Iatency (2,3).
  • Programmable burst length (1,2,4,8,& Full page).
  • Programmable wrap sequence (Sequential/Interleave).
  • Automatic precharge and controlled precharge.
  • Auto refresh and self refresh modes.
  • Dual internal banks controlled by A11(Bank select).

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Datasheet Details

Part number VG3617161ET
Manufacturer Vanguard International Semiconductor
File Size 1.10 MB
Description CMOS Synchronous Dynamic RAM
Datasheet download datasheet VG3617161ET Datasheet
Additional preview pages of the VG3617161ET datasheet.

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Full PDF Text Transcription

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VIS Description VG3617161ET 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately designed with performance concern for current high-speed application. Programmable CAS Latency and Burst Length make it possible to be used in widely various domains. It is packaged by using JEDEC standard pinouts and standard plastic 50-pin TSOP II. Features • Single 3.3V +/- 0.
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