VS2302AT Datasheet PDF - Vanguard Semiconductor N-Channel Advanced Power MOSFET Specs

VS2302AT - N-Channel Advanced Power MOSFET

Datasheet Summary

Description

VS2302AT designed by the trench processing techniques to achieve extremely low on-resistance.

And fast switching speed and improved transfer effective .

Features

Ron(typ. )=30 mΩ @VGS=4.5V.
Low On-Resistance.
150°C Operating Temperature.
Fast Switching.
Lead-Free, RoHS Compliant VS2302AT 20V/3.2A N-Channel Advanced Power MOSFET.

Datasheet Details

Part number	VS2302AT
Manufacturer	Vanguard Semiconductor
File Size	283.39 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	VS2302AT Datasheet
Additional preview pages of the VS2302AT datasheet.

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Full PDF Text Transcription

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Features ♦Ron(typ.)=30 mΩ @VGS=4.5V ♦Low On-Resistance ♦150°C Operating Temperature ♦Fast Switching ♦Lead-Free, RoHS Compliant VS2302AT 20V/3.2A N-Channel Advanced Power MOSFET Description VS2302AT designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.

Published: Jun 19, 2018 |