VS3009DS Datasheet, Mosfet, Vanguard Semiconductor

VS3009DS Features

• Mosfet 30V/8A Ron(typ.)=16 mΩ @VGS=10V Ron(typ.)=25 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, Green Compliant VS3009DS 30V/8A Dual N-Channel

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Part number:

VS3009DS

Manufacturer:

Vanguard Semiconductor

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254.43kb

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📄 Datasheet

Description:

30v/8a dual n-channel advanced power mosfet. VS3009DS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved t

VS3009DS Application

• Applications Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TST

TAGS

VS3009DS

Vanguard Semiconductor

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