VS3009DS Datasheet PDF - Vanguard Semiconductor 30V/8A Dual N-Channel Advanced Power MOSFET Specs

VS3009DS - 30V/8A Dual N-Channel Advanced Power MOSFET

Datasheet Summary

Description

VS3009DS designed by the trench processing techniques to achieve extremely low on-resistance.

And fast switching speed and improved transfer effective .

Features

30V/8A Ron(typ. )=16 mΩ @VGS=10V Ron(typ. )=25 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, Green Compliant VS3009DS 30V/8A Dual N-Channel Advanced Power MOSFET SOP8.

Datasheet Details

Part number	VS3009DS
Manufacturer	Vanguard Semiconductor
File Size	254.43 KB
Description	30V/8A Dual N-Channel Advanced Power MOSFET
Datasheet	VS3009DS Datasheet
Additional preview pages of the VS3009DS datasheet.

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Full PDF Text Transcription

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Features 30V/8A Ron(typ.)=16 mΩ @VGS=10V Ron(typ.)=25 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, Green Compliant VS3009DS 30V/8A Dual N-Channel Advanced Power MOSFET SOP8 Description VS3009DS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications.

Published: Aug 19, 2018 |