VS3019AD Datasheet PDF - Vanguard Semiconductor N-Channel Advanced Power MOSFET Specs

VS3019AD - N-Channel Advanced Power MOSFET

Datasheet Summary

Description

VS3019AD designed by the trench processing techniques to achieve extremely low on-resistance.

And fast switching speed and improved transfer effective .

Features

Ron(typ. )=25 mΩ @VGS=10V Ron(typ. )=35 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant VS3019AD 30V/19A N-Channel Advanced Power MOSFET.

Datasheet Details

Part number	VS3019AD
Manufacturer	Vanguard Semiconductor
File Size	250.57 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	VS3019AD Datasheet
Additional preview pages of the VS3019AD datasheet.

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Full PDF Text Transcription

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Features Ron(typ.)=25 mΩ @VGS=10V Ron(typ.)=35 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant VS3019AD 30V/19A N-Channel Advanced Power MOSFET Description VS3019AD designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications.

Published: Jun 20, 2018 |