VS3625DB - 30V Dual Asymmetric N-Channel Advanced Power MOSFET

Vanguard Semiconductor

Datasheet Details

Part number	VS3625DB
Manufacturer	Vanguard Semiconductor
File Size	1.02 MB
Description	30V Dual Asymmetric N-Channel Advanced Power MOSFET
Datasheet	VS3625DB-VanguardSemiconductor.pdf

Dual Asymmetric N-Channel.
VitoMOS® Ⅱ Technology.
100% Avalanche Tested,100% Rg Tested V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5V I D(Wire bond Limited) 30 30 V 6.6 4.5 mΩ 10 7 mΩ 24 36 A DFN3x3 Part ID VS3625DB Package Type DFN3x3 Marking 3625DB Packing 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating Q1 Q2 V(BR)DSS Drain-Source breakdown voltage 30 30 VGS Gate-Source voltage ±20 ±20 IS Diode c.

📁 VS3625DB Similar Datasheet

Other Datasheets by Vanguard Semiconductor

Published: Jul 19, 2025 |