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VS6606GE Datasheet - Vanguard Semiconductor

VS6606GE - N-Channel Advanced Power MOSFET

VS6606GE Features

* V DS R @ DS(on),TYP VGS=10V 65 V 5 mΩ

* Enhancement mode

* Low on-resistance RDS(on) @ VGS=4.5 V

* VitoMOS® Ⅱ Technology

* Fast Switching and High efficiency R @ DS(on),TYP VGS=4.5V ID 8 mΩ 70 A PDFN3333

* Pb-free lead plating; RoHS compliant; Halogen free Part ID VS6606G

VS6606GE-VanguardSemiconductor.pdf

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Datasheet Details

Part number:

VS6606GE

Manufacturer:

Vanguard Semiconductor

File Size:

552.31 KB

Description:

N-channel advanced power mosfet.

VS6606GE Distributor

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