VSO007N07MS Datasheet, Mosfet, Vanguard Semiconductor

VSO007N07MS Features

• Mosfet
• N-Channel，5V Logic Level Control
• Enhancement mode
• Very low on-resistance RDS(on) @ VGS=4.5 V
• VitoMOS® Technology
• 100% Avalanche test

PDF File Details

Part number:

VSO007N07MS

Manufacturer:

Vanguard Semiconductor

File Size:

610.02kb

Download:

📄 Datasheet

Description:

N-channel advanced power mosfet.

TAGS

VSO007N07MS

Vanguard Semiconductor

📁 Related Datasheet

VSO007N04MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested .

VSO007N06MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  Pb-free lead plating; RoHS pliant VSO007N0.

VSO004P03MS - P-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  P-Channel，-5V Logic Level Control  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  Pb-free lead plating;.

VSO005N06MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested .

VSO006N04MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested .

VSO006P03MS - P-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  P-Channel，-5V Logic Level Control  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  Pb-free lead plating;.

VSO008N03MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  Pb-free lead plating; RoHS pliant VSO008N0.

VSO008N06MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  Pb-free lead plating; R.

VSO008N10MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  100% Avalanche test .

VSO008P03MS - P-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  P-Channel  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  Repetitive Avalanche Allowed up to Tjmax  Pb.