DG884
Vishay ↗ Siliconix
188.80kb
8 x 4 wideband video crosspoint array. The DG884 contains a matrix of 32 T-switches configured in an 8 4 crosspoint array. Any of the IN/OUT pins may be used as an input or
TAGS
📁 Related Datasheet
DG8040C - Fixed Inductors
(TOKO)
Fixed Inductors for Surface Mounting
DG8040C
Inductance Range: 1.0~100H
Remended patterns
(Unit: mm)
(Unit: mm)
FEATURES
Low Profile (H=.
DG808BC45 - Gate Turn-off Thyristor
(Dynex)
Replaces DS5914-2
DG808BC45
Gate Turn-off Thyristor
DS5914-3
November 2021 (LN41298)
FEATURES
KEY PARAMETERS
• Double Side Cooling • High Relia.
DG830 - N-CHANNEL ENHANCEMENT MODE MOSFET
(DGME)
DG830
N N-CHANNEL ENHANCEMENT MODE MOSFET
:V1.0
General Description
DG830N,, ,,,。 ,,。
DG830 is an N-channel enhancement mode MOSFET, which is pro.
DG840 - N-CHANNEL ENHANCEMENT MODE MOSFET
(DGME)
DG840
N N-CHANNEL ENHANCEMENT MODE MOSFET
:V1.0
General Description
DG840N,, ,,,。 ,,。
DG840 is an N-channel enhancement mode MOSFET, which is pro.
DG858BW45 - Gate Turn-off Thyristor
(Dynex)
DG858BW45
DG858BW45
Gate Turn-off Thyristor
Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000
FEATURES
q q q q q q
Double Side Cooling.
DG858DW45 - Gate Turn-Off Thyristor
(Dynex)
Replaces DS4334-4
DG858DW45
Gate Turn-off Thyristor
DS4334-5
July 2014
(LN31737)
FEATURES
KEY PARAMETERS
Double Side Cooling High Reliabil.
DG8N60 - N-CHANNEL ENHANCEMENT MODE MOSFET
(DGME)
DG8N60
N N-CHANNEL ENHANCEMENT MODE MOSFET
:V1.0
General Description
DG8N60N,, ,,,。 ,,。
DG8N60 is an N-channel enhancement mode MOSFET, which is .
DG8N65 - N-CHANNEL ENHANCEMENT MODE MOSFET
(DGME)
DG8N65
N N-CHANNEL ENHANCEMENT MODE MOSFET
:V1.0
General Description
DG8N65N,, ,,,。 ,,。
DG8N65 is an N-channel enhancement mode MOSFET, which is .
DG8N70 - N-CHANNEL ENHANCEMENT MODE MOSFET
(DGME)
DG8N70
N N-CHANNEL ENHANCEMENT MODE MOSFET
:V1.0
General Description
DG8N70N,, ,,,。 ,,。
DG8N70 is an N-channel enhancement mode MOSFET, which is .
DG-105 - Photointerrupters
(KODENSHI KOREA CORP)
Photointerrupters(Reflective)
K O D E N S H I
DG-105
DIMENSIONS
The DG°©105 carrying a unique hysteresis transistor (BAMBIT)developed by KODENSHI CO.