Part number:
DG8N65
Manufacturer:
DGME
File Size:
908.41 KB
Description:
N-channel enhancement mode mosfet.
DG8N65
DGME
908.41 KB
N-channel enhancement mode mosfet.
📁 Related Datasheet
DG8N60 - N-CHANNEL ENHANCEMENT MODE MOSFET
(DGME)
DG8N60
N N-CHANNEL ENHANCEMENT MODE MOSFET
：V1.0
General Description
DG8N60N，， ，，，。 ，，。
DG8N60 is an N-channel enhancement mode MOSFET, which is .
DG8N70 - N-CHANNEL ENHANCEMENT MODE MOSFET
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DG8N70
N N-CHANNEL ENHANCEMENT MODE MOSFET
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DG8N70N，， ，，，。 ，，。
DG8N70 is an N-channel enhancement mode MOSFET, which is .
DG8040C - Fixed Inductors
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Fixed Inductors for Surface Mounting
DG8040C
Inductance Range: 1.0~100H
Remended patterns
(Unit: mm)
(Unit: mm)
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Low Profile (H=.
DG808BC45 - Gate Turn-off Thyristor
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Replaces DS5914-2
DG808BC45
Gate Turn-off Thyristor
DS5914-3
November 2021 (LN41298)
FEATURES
KEY PARAMETERS
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DG830 - N-CHANNEL ENHANCEMENT MODE MOSFET
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DG830
N N-CHANNEL ENHANCEMENT MODE MOSFET
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DG830N，， ，，，。 ，，。
DG830 is an N-channel enhancement mode MOSFET, which is pro.
DG840 - N-CHANNEL ENHANCEMENT MODE MOSFET
(DGME)
DG840
N N-CHANNEL ENHANCEMENT MODE MOSFET
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DG840N，， ，，，。 ，，。
DG840 is an N-channel enhancement mode MOSFET, which is pro.
DG858BW45 - Gate Turn-off Thyristor
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DG858BW45
DG858BW45
Gate Turn-off Thyristor
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q q q q q q
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DG858DW45 - Gate Turn-Off Thyristor
(Dynex)
Replaces DS4334-4
DG858DW45
Gate Turn-off Thyristor
DS4334-5
July 2014
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FEATURES
KEY PARAMETERS
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